Semiconductor Device Including an Integrated Resistor

ABSTRACT

A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

BACKGROUND

Semiconductor devices based on semiconductor power transistors such asinsulated gate bipolar transistors (IGBTs), or insulated gate fieldeffect transistors (IGFETs), for example metal oxide semiconductor fieldeffect transistors (MOSFETs) typically switch large load currents.Failure modes that may occur in these devices during operation invarious applications require protective measures to prevent thesemiconductor devices from damage such as excessive heat.

In order to meet with these demands, it is desirable to improveprotective measures of semiconductor devices.

SUMMARY

The present disclosure relates to a semiconductor device. Thesemiconductor device includes a transistor device in a semiconductor dieincluding a semiconductor body. The transistor device includestransistor cells connected in parallel and covering at least 80% of anoverall active area at a first surface of the semiconductor body. Thesemiconductor device further includes a control terminal contact area atthe first surface electrically connected to a control electrode of eachof the transistor cells. A first load terminal contact area at the firstsurface electrically connected to a first load terminal region of eachof the transistor cells. The semiconductor device further includes aresistor in the semiconductor die and electrically coupled between thecontrol terminal contact area and the first load terminal contact area.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description and onviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure and are incorporated in and constitute apart of this specification. The drawings illustrate the embodiments ofthe present disclosure and together with the description serve toexplain principles of the disclosure. Other embodiments and intendedadvantages will be readily appreciated as they become better understoodby reference to the following detailed description.

FIG. 1A depicts a schematic plan view of a semiconductor device forillustrating an embodiment of a power transistor including a resistorelectrically coupled between a first load terminal and a controlterminal.

FIGS. 1B to 1D illustrate schematic cross-sectional views along cutlines AA, BB, CC of FIG. 1A, respectively, for illustrating anembodiment.

FIGS. 2A to 2C illustrate schematic illustrate schematic cross-sectionalviews along cut lines AA, BB, CC of FIG. 1, respectively, forillustrating an embodiment.

FIG. 3 depicts a schematic cross-sectional view of a semiconductordevice for illustrating a flexible adjustment of a resistance value of aresistor and a blocking voltage capability of a diode according to anembodiment.

FIG. 4 is a schematic illustration of the semiconductor deviceillustrated in FIG. 1 being a three terminal device.

FIG. 5 is a schematic illustration of the semiconductor deviceillustrated in FIG. 1 being a five terminal device.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof and in which are shownby way of illustrations specific embodiments in which the invention maybe practiced. It is to be understood that other embodiments may beutilized and structural or logical changes may be made without departingfrom the scope of the present invention. For example, featuresillustrated or described for one embodiment can be used on or inconjunction with other embodiments to yield yet a further embodiment. Itis intended that the present invention includes such modifications andvariations. The examples are described using specific language, whichshould not be construed as limiting the scope of the appending claims.The drawings are not scaled and are for illustrative purposes only. Forclarity, the same elements have been designated by correspondingreferences in the different drawings if not stated otherwise.

The terms “having”, “containing”, “including”, “comprising” and the likeare open and the terms indicate the presence of stated structures,elements or features but not preclude the presence of additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

The term “electrically connected” describes a permanent low-ohmicconnection between electrically connected elements, for example a directcontact between the concerned elements or a low-ohmic connection via ametal and/or highly doped semiconductor. The term “electrically coupled”includes that one or more intervening element(s) adapted for signaltransmission may exist between the electrically coupled elements, forexample elements that temporarily provide a low-ohmic connection in afirst state and a high-ohmic electric decoupling in a second state.

The Figures illustrate relative doping concentrations by indicating “−”or “+” next to the doping type “n” or “p”. For example, “n−” means adoping concentration that is lower than the doping concentration of an“n”-doping region while an “n+”-doping region has a higher dopingconcentration than an “n”-doping region. Doping regions of the samerelative doping concentration do not necessarily have the same absolutedoping concentration. For example, two different “n”-doping regions mayhave the same or different absolute doping concentrations.

The terms “wafer”, “substrate”, “semiconductor body” or “semiconductorsubstrate” used in the following description may include anysemiconductor-based structure that has a semiconductor surface. Waferand structure are to be understood to include silicon (Si),silicon-on-insulator (SOI), silicon-on sapphire (SOS), doped and undopedsemiconductors, epitaxial layers of silicon supported by a basesemiconductor foundation, and other semiconductor structures. Thesemiconductor need not be silicon-based. The semiconductor could as wellbe silicon germanium (SiGe), germanium (Ge) or gallium arsenide (GaAs).According to other embodiments, silicon carbide (SiC) or gallium nitride(GaN) may form the semiconductor substrate material.

The term “horizontal” as used in this specification intends to describean orientation substantially parallel to a first or main surface of asemiconductor substrate or body. This can be for instance the surface ofa wafer or a die.

The term “vertical” as used in this specification intends to describe anorientation which is substantially arranged perpendicular to the firstsurface, i.e. parallel to the normal direction of the first surface ofthe semiconductor substrate or body.

In this specification, a second surface of a semiconductor substrate orsemiconductor body is considered to be formed by the lower or backsidesurface while the first surface is considered to be formed by the upper,front or main surface of the semiconductor substrate. The terms “above”and “below” as used in this specification therefore describe a relativelocation of a structural feature to another

In this specification, n-doped is referred to as first conductivity typewhile p-doped is referred to as second conductivity type. Alternatively,the semiconductor devices can be formed with opposite doping relationsso that the first conductivity type can be p-doped and the secondconductivity type can be n-doped.

Processing of a semiconductor wafer may result in semiconductor deviceshaving terminal contacts such as contact pads (or electrodes) whichallow electrical contact to be made with the integrated circuits ordiscrete semiconductor devices included in the semiconductor body. Theelectrodes may include one or more electrode metal layers which areapplied to the semiconductor material of the semiconductor chips. Theelectrode metal layers may be manufactured with any desired geometricshape and any desired material composition. The electrode metal layersmay, for example, be in the form of a layer covering an area. Anydesired metal, for example Cu, Ni, Sn, Au, Ag, Pt, Pd, and an alloy ofone or more of these metals may be used as the material. The electrodemetal layer(s) need not be homogenous or manufactured from just onematerial, that is to say various compositions and concentrations of thematerials contained in the electrode metal layer(s) are possible. As anexample, the electrode layers may be dimensioned large enough to bebonded with a wire.

Specific embodiments described in this specification pertain to, withoutbeing limited thereto, to semiconductor devices, in particular to fieldeffect semiconductor transistors. Within this specification the terms“semiconductor device” and “semiconductor component” are usedsynonymously. The semiconductor device typically includes a field-effectstructure. The field-effect structure may be a MOSFET or anIGBT-structure having a pn-junction forming a body diode between a driftregion of the first conductivity type and a body region of the secondconductivity type. The semiconductor device is typically a verticalsemiconductor device having two load metallizations, for example asource metallization and a drain metallization for a MOSFET, which arearranged opposite to each other and in low resistive contact with arespective contact region. The field-effect structure may also be formedby a JFET-structure.

By way of example, the semiconductor device is a power semiconductordevice having an active area with, for example, a plurality ofIGBT-cells or MOSFET-cells for carrying and/or controlling a loadcurrent between the two load metallizations. Furthermore, the powersemiconductor device has typically a peripheral area with at least oneedge-termination structure at least partially surrounding the activearea when seen from above.

The term “field-effect” as used in this specification intends todescribe the electric-field mediated formation of a conductive “channel”of a first conductivity type and/or control of conductivity and/or shapeof the channel between two regions of the first conductivity type. Theconductive channel may be formed and/or controlled in a semiconductorregion of a second conductivity type, typically a body region of thesecond conductivity type, which is arranged between the two regions ofthe first conductivity type. Due to the field-effect, a unipolar currentpath through the channel region is formed and/or controlled between asource region or emitter region of the first conductivity type and adrift region of the first conductivity type in a MOSFET-structure and anIGBT-structure, respectively. The drift region may be in contact with ahigher doped drain region of the first conductivity type or a higherdoped collector region of the second conductivity type, respectively.The drain region or the collector region is in low resistive electriccontact with a drain or collector electrode. The source region oremitter region is in low resistive electric contact with a source oremitter electrode. In a JFET-structure, the channel region is typicallyformed by a portion of the drift region of the first conductivity typearranged between a gate region and a body region of the secondconductivity type, and may be controlled by changing the width of adepletion layer formed between the gate region and the channel region.

In the context of the present specification, the term “MOS”(metal-oxide-semiconductor) should be understood as including the moregeneral term “MIS” (metal-insulator-semiconductor). For example, theterm MOSFET (metal-oxide-semiconductor field-effect transistor) shouldbe understood to include FETs having a gate insulator that is not anoxide, i.e. the term MOSFET is used in the more general term meaning ofIGFET (insulated-gate field-effect transistor) and MISFET(metal-insulator-semiconductor field-effect transistor), respectively.

In the context of the present specification, the term “gate electrode”intends to describe an electrode which is situated next to, andconfigured to form and/or control a channel region. The term “gateelectrode” shall embrace an electrode or conductive region which issituated next to, and insulated from the body region by an insulatingregion forming a gate dielectric region and configured to form and/orcontrol a channel region through the body region by charging to anappropriate voltage.

By way of example, the gate electrode is implemented as trench-gateelectrode, i.e. as a gate electrode which is arranged in a trenchextending from the main surface into the semiconductor substrate orbody. The gate electrode may also be implemented as a planar gateelectrode.

A transistor cell of an active area of a power semiconductor device suchas a power transistor device may, in a horizontal cross-section, includea trench-gate electrode or a planar gate electrode and a surroundingportion of a mesa when the trench-gate electrodes form a two-dimensionallattice, for example in the form of a checker board, when seen fromabove.

Alternatively, the transistor cell of the active area of a powerfield-effect semiconductor device may, in a horizontal cross-section,include a trench-gate electrode or a planar gate electrode and arespective portion of two adjoining mesas when seen from above. In theseembodiments, trench-gate electrodes, mesas and unit cells may formrespective one-dimensional lattices.

The conductive regions for forming the gate electrode and the fieldelectrode, respectively, may be made of a material with high enoughelectric conductivity so that the conductive region forms anequipotential region during device operation. For example, theconductive region may be made of a material with metallic ornear-metallic electric conductivity such as a metal, for examplewolfram, highly doped poly-silicon, a silicide or the like. Typically,the conductive region is in resistive electric connection with a gatemetallization of the semiconductor device. The insulating region may bemade of any suitable dielectric material such as silicon oxide, forexample thermal silicon oxide, silicon nitride, silicon oxynitride orthe like.

FIGS. 1A to 1D depict a schematic plan and cross-sectional views of asemiconductor device 10 for illustrating an embodiment. Thecross-sectional view illustrated in FIG. 1B is taken along a cut lineAA. The cross-sectional view illustrated in FIG. 1C is taken along a cutline BB. The cross-sectional view illustrated in FIG. 1D is taken alonga cut line CC.

The semiconductor device 10 includes a transistor device 11 in asemiconductor die 100 including a semiconductor body 101. The transistordevice 11 includes transistor cells 102 connected in parallel andcovering at least 80%, for example more than 80% or more than 85% oreven more than 90% of an overall active area 103 at a first surface 104of the semiconductor body 101. An edge termination area 105 surroundsthe active area 103. In the edge termination area 105, edge terminationstructures may be formed for lowering the electric field at the edges.Examples of edge termination structures include field plates, junctiontermination extension (JTE) structures, variation of lateral doping(VLD) structures, for example. In some embodiments, the transistordevice 11 is a power transistor device of more than 1A rated maximumload current and a rated load terminal to load terminal breakdownvoltage larger than 10V, or larger than 12V, or larger than 15V, orlarger than 20V, or larger than 24V, or larger than 30V, or larger than100V, or larger than 300V, or larger than 600V, or larger than 1000V, orlarger than several 1000V for IGBTs.

The semiconductor device 10 further includes a gate terminal contactarea G at the first surface 104 electrically connected to a gateelectrode 106 of each of the transistor cells 102. A gate dielectric 107is sandwiched between the gate electrode 106 and the semiconductor body101. The gate electrode terminal contact area G is one example of acontrol terminal contact area, for example. The gate electrode 106 isone example of a control electrode, for example.

The semiconductor device 10 further includes a source terminal contactarea S at the first surface 104. electrically connected to an n⁺-dopedsource region 108 at the first surface 104. The source terminal contactarea S is one example of a first load terminal contact area. Both thegate terminal contact area G and the source terminal contact area S maybe contact pads dimensioned large enough to be bonded with a wire, forexample. The n⁺-doped source region 108 is one example of a first loadterminal region.

A contact 109, for example a contact plug and/or a contact lineextending through an intermediate dielectric 110 electrically connectsthe source terminal contact area S and the n⁺-doped source region 108 aswell as the source terminal contact area S and a p-doped body region111, for example via p⁺-doped body contact region 112.

The semiconductor device 10 further includes a drain terminal contactarea D at a second surface 113 of the semiconductor body 101 opposite tothe first surface 104. The drain terminal contact area D is electricallyconnected to an n⁺-doped drain region 114. The drain terminal contactarea D is one example of a second load terminal contact area. Then⁺-doped drain region 114 is one example of a second load terminalregion.

The semiconductor device 10 illustrated in FIG. 1B is an example of avertical power field effect transistor (power FET). A load current flowdirection in the transistor cells 102 through an n-doped drift zone 115is a vertical direction z perpendicular to the first and second surfaces104, 113.

The semiconductor device 10 further includes a resistor R in asemiconductor layer 116, for example a polycrystalline silicon layer.The resistor R is electrically coupled between the gate terminal contactarea G and the source terminal contact area S via contacts 117.

In some embodiments, the semiconductor layer includes a plurality ofparts of different conductivity type and resistivity, for example byintroducing a different amount and/or type of dopants into the parts.This allows for further integrating a diode D into the semiconductorlayer 116 as is illustrated by dashed lines in FIG. 1C. In the schematiccross-sectional view of FIG. 1C, the semiconductor layer 116 extendsfrom below the source terminal contact area S to below the gate terminalcontact area G, for example.

The resistor R electrically coupled between gate terminal allows forprotecting the semiconductor device against the failure mode ofinterruption of a gate voltage supply, for example caused by wire bondlift and/or gate pin destruction. During this failure mode, the gate maybe discharged via the resistor R, thereby avoiding a non-controllableturned-on power transistor that may otherwise lead to damage of thepower transistor and surrounding application components, for example dueto excessive heating. In some embodiments, a resistivity of the resistoris set in a range from 50 kOhm to 150 kOhm. A turn-off time may be setby adjusting the resistivity of the resistor. By increasing theresistivity of the resistor, the turn-off time may be increased and bydecreasing the resistivity of the resistor, the turn-off time may bedecreased, for example.

Integration of the diode D allows for blocking current flow during agate stress test applying a negative voltage at the gate terminal withrespect to the source terminal of an re-channel FET, for example. Thediode D may be formed as a polycrystalline silicon diode, for example ann⁺/p diode, a p⁺/n diode or an n⁺/p⁺ diode. Any of these diodes may beformed as a chain of sub-diodes. The number of the sub-diodes may be setwith respect to blocking voltage requirements, for example.

The resistor R and/or the diode D may be integrated into thesemiconductor device 10 in a variety of ways. As is illustrated in theschematic cross-sectional view of FIG. 1D along cut line CC of FIG. 1A,the semiconductor layer 116 including the resistor R and the diode D mayalso extend from below the source terminal contact area S to below agate terminal interconnection line GI, for example a gate runner partlysurrounding the active area for providing a low-ohmic interconnection tothe gate electrodes 106 of the transistor cells 102. The semiconductorlayer 116 may also include a plurality of separate parts. Sub-diodesformed in some of the separate parts may be interconnected by metaland/or any low-ohmic interconnection to form the diode D as aseries-connection of sub-diodes.

The transistor cells 102 illustrated in FIG. 1B are exemplified asvertical IGFET cells. Other embodiments may include vertical IGFET cellsthat differ from the design illustrated in FIG. 1B in structuralfeatures, for example with respect to a design of the source and bodyregions 111, 108 and their contact scheme. Further embodiments mayinclude trench gate structures instead of the planar gate structuresillustrated in FIG. 1A.

Transistor cells 102 including trench gate structures are illustrated inthe schematic cross-sectional view of FIG. 2A along cut line AA ofFIG.1A. The gate electrode 106 and the gate dielectric 107 are arrangedin a trench 118 extending into the semiconductor body 101 from the firstsurface 104. The gate dielectric 107 is part of a dielectric structure119 in the trench 118. The dielectric structure 119 may further provideelectric insulation between the gate electrode 107 and one or moreoptional field electrodes in the trench 118. In the embodimentillustrated in FIG. 2A, the one or more field electrodes are exemplifiedby a field electrode 120 arranged below the gate electrode 106.

In some embodiments, a forward voltage VF of the diode D at a forwardcurrent in a range of 1 mA and 10 mA is smaller than a threshold voltageof the transistor device 11 at the same current level.

As is illustrated in the schematic cross-sectional view of FIG. 2B alongcut line BB of FIG. 1A, the semiconductor layer 116 including theresistor R and the diode D is arranged in a trench 121 and extends frombelow the source terminal contact area S to below the gate terminalcontact area G. A dielectric structure 122 in the trench 121electrically insulates the semiconductor layer 116 including theresistor R and the diode D from a surrounding part of the semiconductorbody 101 and from one or more optional additional semiconductor layersin the trench 121. In the embodiment illustrated in FIG. 2B, the one ormore additional semiconductor layers are exemplified by an additionalsemiconductor layer 123. The dielectric structure 119 of FIG. 2A and thedielectric structure 122 of FIG. 2B may be processed together, forexample by dielectric growth or deposition processes such as thermaloxidation and chemical vapor deposition techniques, for example.Likewise, the gate electrode 106 illustrated in FIG. 2A and thesemiconductor layer 116 in the trench 121 of FIG. 2B may be processedtogether, for example by a polycrystalline silicon deposition process.When adjusting conductivity type and resistivity of the gate electrode106 and the semiconductor layer 116, different doping processes may beapplied, for example. Similar to joint processing of the dielectricstructures 119, 122 or the gate electrode 106/the semiconductor layer116, joint processing may also be carried out with respect to thetrenches 118, 121 or the field electrode 120/additional semiconductorlayer 123, or the contacts 109, 117.

As is illustrated in the schematic cross-sectional view of FIG. 2C alongcut line CC of FIG. 1A, the semiconductor layer 116 including theresistor R and the diode D in the trench 121 may also extend from belowthe source terminal contact area S to below the gate terminalinterconnection line GI, for example a gate runner partly surroundingthe active area 103 for providing a low-ohmic interconnection to thegate electrodes 106 of the transistor cells 102.

Referring to the schematic cross-sectional view of the semiconductorbody 101 depicted in FIG. 3, the semiconductor layer 116 including theresistor and/or the diode D partly extends below the source terminalcontact area S and/or the gate terminal contact area G and/or the gateterminal interconnection line GI and is electrically connected to arespective one of the source terminal contact area S, the gate terminalcontact area G, or the gate terminal interconnection line GI by thecontact 117. A flexible adjustment of a resistance value of the resistorR and/or a blocking voltage capability/breakdown voltage of the diode Dmay be achieved by placing the contact 117 at different locations alongan extension of the semiconductor layer in an extension area 124 (seedashed lines in FIG. 3 for displaced contact 117). As is illustrated inthe schematic circuit diagrams for the areas 124, the resistor R mayinclude a flexible serial connection of sub-resistors R1, and the diodeD may include a flexible serial connection of sub-diodes D1, D2, therebyachieving a flexible adjustment of the resistance value and the blockingvoltage capability. Sub-elements R1, D1, D2 of the resistor R and thediode D may be serially connected in a flexible way.

In some embodiments, for example the embodiment illustrated in FIGS. 1Ato 1D, the semiconductor device comprises a single metal wiring level,the control terminal contact area, for example the source terminalcontact area S and the first load terminal contact area, for example thegate terminal contact area G being different parts of the single metalwiring level. The single wiring level that may be formed of a patternedmetallization layer or a patterned metallization layer stack may thus bethe only metal wiring level above the first surface 104.

In some embodiments, for example as is illustrated in FIG. 4, thesemiconductor device 10 is a three-terminal device including asemiconductor die in a package 125 having three pins, the three pins 126being electrically connected to first and second load terminals contactareas S, D and the control terminal area G of the transistor device. Insome other embodiments, the package 125 may include more than threepins, the other pins being also connected to one or more of the firstand second load terminals contact areas S, D and the control terminalarea G. The package 125 may be a lead frame based package or a substratebased package, for example based on Through Hole Technology (THT) orSurface Mounted Device (SMD), for example.

The semiconductor device may lack any supply voltage terminals or −pins.

In some embodiments, for example as is illustrated in FIG. 5, thesemiconductor device 10 is a five-terminal device including asemiconductor die in a package 125 having five pins, the five pins beingelectrically connected to first and second load terminals contact areasS, D, first and second load sense terminals and the control terminalarea G of the transistor device. In some other embodiments, the package125 may include more than five pins, the other pins being also connectedto one or more of the first and second load terminals contact areas S,D, the first and second load sense terminals and the control terminalarea G.

In some embodiments, the term semiconductor device 10 is a powersemiconductor device with high voltage and/or high current switchingcapabilities, for example more than 1A rated maximum load current and arated load terminal to load terminal breakdown voltage in a range from10V to 1000V.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A semiconductor device, comprising: a transistordevice in a semiconductor die including a semiconductor body, thetransistor device comprising transistor cells connected in parallel andcovering at least 80% of an overall active area at a first surface ofthe semiconductor body; a control terminal contact area at the firstsurface electrically connected to a control electrode of each of thetransistor cells; a first load terminal contact area at the firstsurface electrically connected to a first load terminal region of eachof the transistor cells; and a resistor in the semiconductor die andelectrically coupled between the control terminal contact area and thefirst load terminal contact area, wherein a current path from thecontrol terminal contact area via the resistor to the first loadterminal contact area is configured to discharge a gate of thetransistor device at a failure mode of interruption of gate voltagesupply, wherein the resistor laterally extends below the first loadterminal contact area, wherein the resistor is electrically connected tothe first load terminal contact area via a contact, wherein anelectrical resistance of the resistor is set by a position of thecontact along a lateral extension of the resistor below the first loadterminal contact area.
 2. The semiconductor device of claim 1, furthercomprising a single metal wiring level, wherein the control terminalcontact area and the first load terminal contact area are differentparts of the single metal wiring level.
 3. The semiconductor device ofclaim 1, wherein the resistor is at least partly embedded in anintermediate dielectric sandwiched between a wiring level of the firstload terminal contact area and the first surface, or wherein theresistor is at least partly arranged in a trench and electricallyinsulated from a surrounding part of the semiconductor body by a trenchdielectric.
 4. The semiconductor device of claim 1, wherein thetransistor device is a vertical transistor device and further includesan edge termination area surrounding the active area, and a second loadterminal contact area at a second surface opposite to the first surface.5. A semiconductor device, comprising: a transistor device in asemiconductor die including a semiconductor body, the transistor devicecomprising transistor cells connected in parallel and covering at least80% of an overall active area at a first surface of the semiconductorbody; a control terminal contact area at the first surface electricallyconnected to a control electrode of each of the transistor cells; afirst load terminal contact area at the first surface electricallyconnected to a first load terminal region of each of the transistorcells; and a resistor in the semiconductor die and electrically coupledbetween the control terminal contact area and the first load terminalcontact area, the resistor being at least partly arranged in a trenchand electrically insulated from a surrounding part of the semiconductorbody by a trench dielectric.
 6. The semiconductor device of claim 5,further comprising a single metal wiring level, wherein the controlterminal contact area and the first load terminal contact area aredifferent parts of the single metal wiring level.
 7. The semiconductordevice of claim 5, wherein the resistor is at least partly embedded inan intermediate dielectric sandwiched between a wiring level of thefirst load terminal contact area and the first surface, or wherein theresistor is at least partly arranged in a trench and electricallyinsulated from a surrounding part of the semiconductor body by a trenchdielectric.
 8. The semiconductor device of claim 5, wherein thetransistor device is a vertical transistor device and further includesan edge termination area surrounding the active area, and a second loadterminal contact area at a second surface opposite to the first surface.9. A semiconductor device, comprising: a transistor device in asemiconductor die including a semiconductor body, the transistor devicecomprising transistor cells connected in parallel and covering at least80% of an overall active area at a first surface of the semiconductorbody; a control terminal contact area at the first surface electricallyconnected to a control electrode of each of the transistor cells; afirst load terminal contact area at the first surface electricallyconnected to a first load terminal region of each of the transistorcells; a resistor in the semiconductor die and electrically coupledbetween the control terminal contact area and the first load terminalcontact area, wherein a current path from the control terminal contactarea via the resistor to the first load terminal contact area isconfigured to discharge a gate of the transistor device at a failuremode of interruption of gate voltage supply; and a pn junction diodeelectrically connected in series with the resistor, wherein the resistoror the pn junction diode laterally extends between the control terminalcontact area or below a control terminal interconnection line and thefirst load terminal contact area, wherein the resistor is electricallyconnected to the control terminal contact area or the control terminalinterconnection line via a contact, wherein an electrical resistance ofthe resistor is set by a position of the contact along a lateralextension of the resistor below the control terminal contact area orbelow the control terminal interconnection line.
 10. The semiconductordevice of claim 9, further comprising a single metal wiring level,wherein the control terminal contact area and the first load terminalcontact area are different parts of the single metal wiring level. 11.The semiconductor device of claim 9, wherein the transistor device is ann-type channel IGFET and an anode of the pn junction diode iselectrically coupled to the control terminal electrode.
 12. Thesemiconductor device of claim 9, wherein the pn junction diode is apolycrystalline silicon pn junction diode.
 13. The semiconductor deviceof claim 9, wherein the resistor and the pn junction diode constitutedifferent parts of a single polycrystalline silicon wiring level, thepolycrystalline silicon wiring level including parts of differentconductivity type.
 14. The semiconductor device of claim 9, wherein aforward voltage VF of the diode structure at a forward current in arange of 1 mA and 10 mA is smaller than a threshold voltage of thetransistor device at the same current level.
 15. The semiconductordevice of claim 9, wherein the pn junction diode comprises a chain of pnjunction sub-diodes electrically connected in series.
 16. Thesemiconductor device of claim 9, wherein the resistor is at least partlyembedded in an intermediate dielectric sandwiched between a wiring levelof the first load terminal contact area and the first surface.
 17. Thesemiconductor device of claim 9, wherein the resistor is at least partlyarranged in a trench and electrically insulated from a surrounding partof the semiconductor body by a trench dielectric.
 18. The semiconductordevice of claim 9, wherein the transistor device is a verticaltransistor device and further includes an edge termination areasurrounding the active area, and a second load terminal contact area ata second surface opposite to the first surface.
 19. The semiconductordevice of claim 9, wherein the pn junction diode laterally extends belowthe control terminal contact area or the control terminalinterconnection line, and wherein the resistor laterally extends belowthe first load terminal contact area.
 20. The semiconductor device ofclaim 9, wherein the transistor device is a power transistor device ofmore than 1 A rated maximum load current and a rated load terminal toload terminal breakdown voltage larger than 10V.